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Deep level anomalies in silicon doped with radioactive Au atoms
DLTS investigations on n- and p-type silicon samples implanted with various radioactive Hg isotopes which decay fully or partly through the series Au/Pt/(Ir) are reported. The deep Au-donor level at E/sub v/+0.374(3) eV is observed in all cases. In p-type silicon its energy differs significantly (E/...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0921-4526(99)00498-6 http://cds.cern.ch/record/438239 |