Deep level anomalies in silicon doped with radioactive Au atoms

DLTS investigations on n- and p-type silicon samples implanted with various radioactive Hg isotopes which decay fully or partly through the series Au/Pt/(Ir) are reported. The deep Au-donor level at E/sub v/+0.374(3) eV is observed in all cases. In p-type silicon its energy differs significantly (E/sub v/+0.438(3) eV). Both Au and Pt are found to produce two acceptor levels in n-type material. An additional donor-like level at E/sub v/+0.499(4) eV is shown to be due to Au. In all detected levels, one atom of Au or Pt is involved and the concentration decreases towards crystal surface. A key result is that, despite the presence of the Au donor in the samples, for all decay series involving Au to Pt conversion we have never observed the appearance of the Pt-donor. (6 refs).