Deep level anomalies in silicon doped with radioactive Au atoms

DLTS investigations on n- and p-type silicon samples implanted with various radioactive Hg isotopes which decay fully or partly through the series Au/Pt/(Ir) are reported. The deep Au-donor level at E/sub v/+0.374(3) eV is observed in all cases. In p-type silicon its energy differs significantly (E/...

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Detalles Bibliográficos
Autores principales: Bollmann, J, Lindner, S, Henry, M O, McGlynn, E, Knack, S
Lenguaje:eng
Publicado: 1999
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1016/S0921-4526(99)00498-6
http://cds.cern.ch/record/438239
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author Bollmann, J
Lindner, S
Henry, M O
McGlynn, E
Knack, S
author_facet Bollmann, J
Lindner, S
Henry, M O
McGlynn, E
Knack, S
author_sort Bollmann, J
collection CERN
description DLTS investigations on n- and p-type silicon samples implanted with various radioactive Hg isotopes which decay fully or partly through the series Au/Pt/(Ir) are reported. The deep Au-donor level at E/sub v/+0.374(3) eV is observed in all cases. In p-type silicon its energy differs significantly (E/sub v/+0.438(3) eV). Both Au and Pt are found to produce two acceptor levels in n-type material. An additional donor-like level at E/sub v/+0.499(4) eV is shown to be due to Au. In all detected levels, one atom of Au or Pt is involved and the concentration decreases towards crystal surface. A key result is that, despite the presence of the Au donor in the samples, for all decay series involving Au to Pt conversion we have never observed the appearance of the Pt-donor. (6 refs).
id cern-438239
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1999
record_format invenio
spelling cern-4382392019-09-30T06:29:59Zdoi:10.1016/S0921-4526(99)00498-6http://cds.cern.ch/record/438239engBollmann, JLindner, SHenry, M OMcGlynn, EKnack, SDeep level anomalies in silicon doped with radioactive Au atomsCondensed MatterDLTS investigations on n- and p-type silicon samples implanted with various radioactive Hg isotopes which decay fully or partly through the series Au/Pt/(Ir) are reported. The deep Au-donor level at E/sub v/+0.374(3) eV is observed in all cases. In p-type silicon its energy differs significantly (E/sub v/+0.438(3) eV). Both Au and Pt are found to produce two acceptor levels in n-type material. An additional donor-like level at E/sub v/+0.499(4) eV is shown to be due to Au. In all detected levels, one atom of Au or Pt is involved and the concentration decreases towards crystal surface. A key result is that, despite the presence of the Au donor in the samples, for all decay series involving Au to Pt conversion we have never observed the appearance of the Pt-donor. (6 refs).oai:cds.cern.ch:4382391999
spellingShingle Condensed Matter
Bollmann, J
Lindner, S
Henry, M O
McGlynn, E
Knack, S
Deep level anomalies in silicon doped with radioactive Au atoms
title Deep level anomalies in silicon doped with radioactive Au atoms
title_full Deep level anomalies in silicon doped with radioactive Au atoms
title_fullStr Deep level anomalies in silicon doped with radioactive Au atoms
title_full_unstemmed Deep level anomalies in silicon doped with radioactive Au atoms
title_short Deep level anomalies in silicon doped with radioactive Au atoms
title_sort deep level anomalies in silicon doped with radioactive au atoms
topic Condensed Matter
url https://dx.doi.org/10.1016/S0921-4526(99)00498-6
http://cds.cern.ch/record/438239
work_keys_str_mv AT bollmannj deeplevelanomaliesinsilicondopedwithradioactiveauatoms
AT lindners deeplevelanomaliesinsilicondopedwithradioactiveauatoms
AT henrymo deeplevelanomaliesinsilicondopedwithradioactiveauatoms
AT mcglynne deeplevelanomaliesinsilicondopedwithradioactiveauatoms
AT knacks deeplevelanomaliesinsilicondopedwithradioactiveauatoms

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