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Annealing of ion-implanted GaN
$^{111m}$Cd and $^{112}$Cd ions have been implanted into GaN. With photoluminescence spectroscopy and perturbed $\gamma-\gamma$-angular correlation spectroscopy (PAC) the reduction of implantation damage and the optical activation of the implants have been observed as a function of annealing tempera...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/438243 |