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Radiation hard position-sensitive cryogenic silicon detectors: the Lazarus effect
The discovery of the so-called Lazarus effect, namely the recovery of the charge collection efficiency (CCE) of irradiated silicon detectors by means of cryogenic cooling has entailed an increasing interest in the behavior of silicon detectors at cryogenic temperatures. We have measured the CCE of a...
| Autores principales: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0921-4526(99)01853-0 http://cds.cern.ch/record/445005 |
| _version_ | 1780895887040446464 |
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| author | Palmieri, V G Abreu, M C Bell, W H Berglund, P de Boer, Wim Borchi, E Borer, K Bruzzi, Mara Buontempo, S Casagrande, L Chapuy, S Cindro, V D'Ambrosio, N Via, D Devine, S R H Dezillie, B Dimcovski, Zlatomir Eremin, V V Esposito, A P Granata, V Grigoriev, E Hauler, F Heijne, Erik H M Heising, S Janos, S Jungermann, L Konorov, I Li, Z Lourenço, C Mikuz, M Niinikoski, T O O'Shea, V Pagano, S Paul, S Pirollo, S Pretzl, Klaus P Rato-Mendes, P Ruggiero, G Smith, K Sonderegger, P Sousa, P Verbitskaya, E Watts, S Zavrtanik, M |
| author_facet | Palmieri, V G Abreu, M C Bell, W H Berglund, P de Boer, Wim Borchi, E Borer, K Bruzzi, Mara Buontempo, S Casagrande, L Chapuy, S Cindro, V D'Ambrosio, N Via, D Devine, S R H Dezillie, B Dimcovski, Zlatomir Eremin, V V Esposito, A P Granata, V Grigoriev, E Hauler, F Heijne, Erik H M Heising, S Janos, S Jungermann, L Konorov, I Li, Z Lourenço, C Mikuz, M Niinikoski, T O O'Shea, V Pagano, S Paul, S Pirollo, S Pretzl, Klaus P Rato-Mendes, P Ruggiero, G Smith, K Sonderegger, P Sousa, P Verbitskaya, E Watts, S Zavrtanik, M |
| author_sort | Palmieri, V G |
| collection | CERN |
| description | The discovery of the so-called Lazarus effect, namely the recovery of the charge collection efficiency (CCE) of irradiated silicon detectors by means of cryogenic cooling has entailed an increasing interest in the behavior of silicon detectors at cryogenic temperatures. We have measured the CCE of a silicon p-i-n diode detector previously irradiated with an equivalent fluence of 1*10/sup 15/ n/cm/sup 2/ neutrons of 1 MeV energy. The charge collection efficiency has been measured at 77 K, showing that the low- temperature operation considerably decreases the bias current. This is also the case when forward voltage bias is applied, which then becomes a suitable option. In this condition, the sample shows a charge collection efficiency in excess of 65% at 250 V corresponding to a most probable signal for a minimum ionizing particle of 21000e /sup /. (6 refs). |
| id | cern-445005 |
| institution | Organización Europea para la Investigación Nuclear |
| language | eng |
| publishDate | 2000 |
| record_format | invenio |
| spelling | cern-4450052019-09-30T06:29:59Zdoi:10.1016/S0921-4526(99)01853-0http://cds.cern.ch/record/445005engPalmieri, V GAbreu, M CBell, W HBerglund, Pde Boer, WimBorchi, EBorer, KBruzzi, MaraBuontempo, SCasagrande, LChapuy, SCindro, VD'Ambrosio, NVia, DDevine, S R HDezillie, BDimcovski, ZlatomirEremin, V VEsposito, A PGranata, VGrigoriev, EHauler, FHeijne, Erik H MHeising, SJanos, SJungermann, LKonorov, ILi, ZLourenço, CMikuz, MNiinikoski, T OO'Shea, VPagano, SPaul, SPirollo, SPretzl, Klaus PRato-Mendes, PRuggiero, GSmith, KSonderegger, PSousa, PVerbitskaya, EWatts, SZavrtanik, MRadiation hard position-sensitive cryogenic silicon detectors: the Lazarus effectDetectors and Experimental TechniquesThe discovery of the so-called Lazarus effect, namely the recovery of the charge collection efficiency (CCE) of irradiated silicon detectors by means of cryogenic cooling has entailed an increasing interest in the behavior of silicon detectors at cryogenic temperatures. We have measured the CCE of a silicon p-i-n diode detector previously irradiated with an equivalent fluence of 1*10/sup 15/ n/cm/sup 2/ neutrons of 1 MeV energy. The charge collection efficiency has been measured at 77 K, showing that the low- temperature operation considerably decreases the bias current. This is also the case when forward voltage bias is applied, which then becomes a suitable option. In this condition, the sample shows a charge collection efficiency in excess of 65% at 250 V corresponding to a most probable signal for a minimum ionizing particle of 21000e /sup /. (6 refs).oai:cds.cern.ch:4450052000 |
| spellingShingle | Detectors and Experimental Techniques Palmieri, V G Abreu, M C Bell, W H Berglund, P de Boer, Wim Borchi, E Borer, K Bruzzi, Mara Buontempo, S Casagrande, L Chapuy, S Cindro, V D'Ambrosio, N Via, D Devine, S R H Dezillie, B Dimcovski, Zlatomir Eremin, V V Esposito, A P Granata, V Grigoriev, E Hauler, F Heijne, Erik H M Heising, S Janos, S Jungermann, L Konorov, I Li, Z Lourenço, C Mikuz, M Niinikoski, T O O'Shea, V Pagano, S Paul, S Pirollo, S Pretzl, Klaus P Rato-Mendes, P Ruggiero, G Smith, K Sonderegger, P Sousa, P Verbitskaya, E Watts, S Zavrtanik, M Radiation hard position-sensitive cryogenic silicon detectors: the Lazarus effect |
| title | Radiation hard position-sensitive cryogenic silicon detectors: the Lazarus effect |
| title_full | Radiation hard position-sensitive cryogenic silicon detectors: the Lazarus effect |
| title_fullStr | Radiation hard position-sensitive cryogenic silicon detectors: the Lazarus effect |
| title_full_unstemmed | Radiation hard position-sensitive cryogenic silicon detectors: the Lazarus effect |
| title_short | Radiation hard position-sensitive cryogenic silicon detectors: the Lazarus effect |
| title_sort | radiation hard position-sensitive cryogenic silicon detectors: the lazarus effect |
| topic | Detectors and Experimental Techniques |
| url | https://dx.doi.org/10.1016/S0921-4526(99)01853-0 http://cds.cern.ch/record/445005 |
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