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Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K
Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by t...
| Autores principales: | , , , , , , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(00)01206-7 http://cds.cern.ch/record/447459 |