Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K

Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by t...

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Detalles Bibliográficos
Autores principales: de Boer, W., Bartsch, V., Bol, J., Dierlamm, A., Grigoriev, E., Hauler, F., Heising, S., Herz, O., Jungermann, L., Keranen, R., Koppenhofer, M., Roderer, F., Schneider, T.
Lenguaje:eng
Publicado: 2000
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(00)01206-7
http://cds.cern.ch/record/447459
_version_ 1780896013056212992
author de Boer, W.
Bartsch, V.
Bol, J.
Dierlamm, A.
Grigoriev, E.
Hauler, F.
Heising, S.
Herz, O.
Jungermann, L.
Keranen, R.
Koppenhofer, M.
Roderer, F.
Schneider, T.
author_facet de Boer, W.
Bartsch, V.
Bol, J.
Dierlamm, A.
Grigoriev, E.
Hauler, F.
Heising, S.
Herz, O.
Jungermann, L.
Keranen, R.
Koppenhofer, M.
Roderer, F.
Schneider, T.
author_sort de Boer, W.
collection CERN
description Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. A good knowledge of the Lorentz angle is needed for design and operation of silicon detectors. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons.
id cern-447459
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2000
record_format invenio
spelling cern-4474592023-03-14T17:18:56Zdoi:10.1016/S0168-9002(00)01206-7http://cds.cern.ch/record/447459engde Boer, W.Bartsch, V.Bol, J.Dierlamm, A.Grigoriev, E.Hauler, F.Heising, S.Herz, O.Jungermann, L.Keranen, R.Koppenhofer, M.Roderer, F.Schneider, T.Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 KOther Fields of PhysicsFuture experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. A good knowledge of the Lorentz angle is needed for design and operation of silicon detectors. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons.Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. A good knowledge of the Lorentz angle is needed for design and operation of silicon detectors. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons.physics/0007059IEKP-KA-2000-14IEKP-KA-2000-14oai:cds.cern.ch:4474592000-07-17
spellingShingle Other Fields of Physics
de Boer, W.
Bartsch, V.
Bol, J.
Dierlamm, A.
Grigoriev, E.
Hauler, F.
Heising, S.
Herz, O.
Jungermann, L.
Keranen, R.
Koppenhofer, M.
Roderer, F.
Schneider, T.
Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K
title Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K
title_full Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K
title_fullStr Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K
title_full_unstemmed Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K
title_short Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K
title_sort lorentz angle measurements in irradiated silicon detectors between 77 k and 300 k
topic Other Fields of Physics
url https://dx.doi.org/10.1016/S0168-9002(00)01206-7
http://cds.cern.ch/record/447459
work_keys_str_mv AT deboerw lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT bartschv lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT bolj lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT dierlamma lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT grigorieve lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT haulerf lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT heisings lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT herzo lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT jungermannl lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT keranenr lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT koppenhoferm lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT rodererf lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k
AT schneidert lorentzanglemeasurementsinirradiatedsilicondetectorsbetween77kand300k

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