Cryogenic operation of silicon detectors

This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5*10/sup 14/ p/cm/sup 2/ and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection ef...

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Detalles Bibliográficos
Autores principales: Collins, P, Barnett, I, Bartalini, P, Bell, W, Berglund, P, de Boer, Wim, Buontempo, S, Borer, K, Bowcock, T J V, Buytaert, J, Casagrande, L, Chabaud, V, Chochula, P, Cindro, V, Da Vià, C, Devine, S R H, Dijkstra, H, Dezillie, B, Dimcovski, Zlatomir, Dormond, O, Eremin, V V, Esposito, A P, Frei, R, Granata, V, Grigoriev, E, Hauler, F, Heising, S, Janos, S, Jungermann, L, Li, Z, Lourenço, C, Mikuz, M, Niinikoski, T O, O'Shea, V, Palmieri, V G, Paul, S, Parkes, C, Ruggiero, G, Ruf, T, Saladino, S, Schmitt, L, Smith, K, Stavitski, I, Verbitskaya, E, Vitobello, F, Zavrtanik, M
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(00)00183-2
http://cds.cern.ch/record/449536

Internet

https://dx.doi.org/10.1016/S0168-9002(00)00183-2
http://cds.cern.ch/record/449536

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