Cryogenic operation of silicon detectors

This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5*10/sup 14/ p/cm/sup 2/ and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection ef...

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Detalles Bibliográficos
Autores principales: Collins, P, Barnett, I, Bartalini, P, Bell, W, Berglund, P, de Boer, Wim, Buontempo, S, Borer, K, Bowcock, T J V, Buytaert, J, Casagrande, L, Chabaud, V, Chochula, P, Cindro, V, Da Vià, C, Devine, S R H, Dijkstra, H, Dezillie, B, Dimcovski, Zlatomir, Dormond, O, Eremin, V V, Esposito, A P, Frei, R, Granata, V, Grigoriev, E, Hauler, F, Heising, S, Janos, S, Jungermann, L, Li, Z, Lourenço, C, Mikuz, M, Niinikoski, T O, O'Shea, V, Palmieri, V G, Paul, S, Parkes, C, Ruggiero, G, Ruf, T, Saladino, S, Schmitt, L, Smith, K, Stavitski, I, Verbitskaya, E, Vitobello, F, Zavrtanik, M
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(00)00183-2
http://cds.cern.ch/record/449536
Descripción
Sumario:This paper reports on measurements at cryogenic temperatures of a silicon microstrip detector irradiated with 24 GeV protons to a fluence of 3.5*10/sup 14/ p/cm/sup 2/ and of a p-n junction diode detector irradiated to a similar fluence. At temperatures below 130 K a recovery of charge collection efficiency and resolution is observed. Under reverse bias conditions this recovery degrades in time towards some saturated value. The recovery is interpreted qualitatively as changes in the effective space charge of the detector causing alterations in the depletion voltage. (17 refs).

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