Characterization of silicon pixel detectors with the $n^{+} n/p^{+}$ and double-sided multiguard ring structure before and after neutron-irradiation

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The lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon...

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Detalles Bibliográficos
Autores principales: Cho Hyo Sung, Xie, X B, Chien, C Y, Liang, G W, Huang, W, Dezillie, B, Eremin, V V, Li, Z
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/457159

Internet

http://cds.cern.ch/record/457159

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