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Characterization of silicon pixel detectors with the $n^{+} n/p^{+}$ and double-sided multiguard ring structure before and after neutron-irradiation
The lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/457159 |
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