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New designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substrates
New designs of silicon pixel detectors have been developed for more radiation-hard CMS forward pixel sensors. The new designs differ from our previous ones in that the guard rings on the n/sup +/ side are replaced with a single wide (640 mu m) n/sup +/ implant, and the n /sup +/ side and the edge re...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/457160 |