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New designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substrates

New designs of silicon pixel detectors have been developed for more radiation-hard CMS forward pixel sensors. The new designs differ from our previous ones in that the guard rings on the n/sup +/ side are replaced with a single wide (640 mu m) n/sup +/ implant, and the n /sup +/ side and the edge re...

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Autores principales: Xie, X B, Cho Hyo Sung, Chien, C Y, Liang, G W, Huang, W, Li, Z
Lenguaje:eng
Publicado: 2000
Materias:
Acceso en línea:http://cds.cern.ch/record/457160
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author Xie, X B
Cho Hyo Sung
Chien, C Y
Liang, G W
Huang, W
Li, Z
author_facet Xie, X B
Cho Hyo Sung
Chien, C Y
Liang, G W
Huang, W
Li, Z
author_sort Xie, X B
collection CERN
description New designs of silicon pixel detectors have been developed for more radiation-hard CMS forward pixel sensors. The new designs differ from our previous ones in that the guard rings on the n/sup +/ side are replaced with a single wide (640 mu m) n/sup +/ implant, and the n /sup +/ side and the edge region of the p/sup +/ side are grounded, giving more potential distribution over the guard rings after irradiation. Thus, these designs have advantages for safe operation of the detectors at a high depletion voltage and for stability of readout chips. All designs were fabricated from normal and oxygen- enriched silicon substrates, and the radiation hardness effects for neutron (1 MeV equivalent) and proton (24 GeV) irradiation of these detectors were compared. Other electrical characteristics of these detectors such as leakage current, potential distribution over the guard rings and full depletion voltage were obtained using standard measurement techniques (I-V, V-V and TCT) before and after irradiation. (8 refs).
id cern-457160
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2000
record_format invenio
spelling cern-4571602019-09-30T06:29:59Zhttp://cds.cern.ch/record/457160engXie, X BCho Hyo SungChien, C YLiang, G WHuang, WLi, ZNew designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substratesDetectors and Experimental TechniquesNew designs of silicon pixel detectors have been developed for more radiation-hard CMS forward pixel sensors. The new designs differ from our previous ones in that the guard rings on the n/sup +/ side are replaced with a single wide (640 mu m) n/sup +/ implant, and the n /sup +/ side and the edge region of the p/sup +/ side are grounded, giving more potential distribution over the guard rings after irradiation. Thus, these designs have advantages for safe operation of the detectors at a high depletion voltage and for stability of readout chips. All designs were fabricated from normal and oxygen- enriched silicon substrates, and the radiation hardness effects for neutron (1 MeV equivalent) and proton (24 GeV) irradiation of these detectors were compared. Other electrical characteristics of these detectors such as leakage current, potential distribution over the guard rings and full depletion voltage were obtained using standard measurement techniques (I-V, V-V and TCT) before and after irradiation. (8 refs).oai:cds.cern.ch:4571602000
spellingShingle Detectors and Experimental Techniques
Xie, X B
Cho Hyo Sung
Chien, C Y
Liang, G W
Huang, W
Li, Z
New designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substrates
title New designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substrates
title_full New designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substrates
title_fullStr New designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substrates
title_full_unstemmed New designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substrates
title_short New designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substrates
title_sort new designs of silicon pixel detectors fabricated from normal and oxygen-enriched silicon substrates
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/457160
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AT chohyosung newdesignsofsiliconpixeldetectorsfabricatedfromnormalandoxygenenrichedsiliconsubstrates
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