Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

Detalles Bibliográficos
Autores principales: Ronning, C R, Dalmer, M, Uhrmacher, M, Restle, M, Vetter, U, Ziegeler, L, Hofsäss, H C, Gehrke, T, Järrendahl, K, Davis, R F
Lenguaje:eng
Publicado: 2000
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1063/1.372154
http://cds.cern.ch/record/467861

Internet

https://dx.doi.org/10.1063/1.372154
http://cds.cern.ch/record/467861

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