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Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon
The degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials. Standard high-grade p-type and n-type substrates and oxygenated n-type substrates have been used. The diodes were studied in terms of rev...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/471549 |