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Performance and Irradiation Tests of the 0.3$\mu$m CMOS TDC for the ATLAS MDT
ATLAS Muon TDC test-element group chip (AMTTEG) was developed and tested to confirm the performance of critical circuits of the TDC and measure radiation tolerance of the process. The chip was fabricated in a 0.3 mm CMOS Gate-Array technology. Measurements of critical elements of the chip such as th...
Autores principales: | , , |
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Lenguaje: | eng |
Publicado: |
CERN
1999
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.5170/CERN-1999-009.462 http://cds.cern.ch/record/472693 |
Sumario: | ATLAS Muon TDC test-element group chip (AMTTEG) was developed and tested to confirm the performance of critical circuits of the TDC and measure radiation tolerance of the process. The chip was fabricated in a 0.3 mm CMOS Gate-Array technology. Measurements of critical elements of the chip such as the PLL, and data buffering circuits demonstrated adequate performance. The effect of gamma-ray irradiation, using a Co60 source, and neutron irradiation, using PROSPERO reactor in France, were also examined. The test results revealed radiation tolerance adequate for the operation of the circuits in the environment of the ATLAS MDT. |
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