Use of external resistor to prevent radiation induced latch-up in commercial CMOS IC's

Detalles Bibliográficos
Autores principales: Skorobogatov, P K, Nikiforov, A Y, Demidov, A A
Lenguaje:eng
Publicado: CERN 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.5170/CERN-2000-010.496
http://cds.cern.ch/record/479719

Internet

https://dx.doi.org/10.5170/CERN-2000-010.496
http://cds.cern.ch/record/479719

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