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Simulation of the response of a silicon pixel detector
A model to simulate the response of a silicon pixel detector is described. The effects of geometrical charge sharing, electronic noise threshold dispersion, capacitive coupling between pixel channels and d -rays production have been taken into account. The model has been tested on the Omega3chip, wh...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2001
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(01)01926-X http://cds.cern.ch/record/485619 |