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Iridium-related deep levels in n-type silicon
Iridium-related deep levels in n-type silicon were studied by deep level transient spectroscopy (DLTS). Two different sets of samples were used which differ in the Ir-doping process. Stable Ir isotopes were introduced in the melt during the floating-zone growth process. Other samples were implanted...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1002/1521-3951(200011)222:1<251::AID-PSSB251>3.0.CO;2-9 http://cds.cern.ch/record/503745 |