Iridium-related deep levels in n-type silicon

Iridium-related deep levels in n-type silicon were studied by deep level transient spectroscopy (DLTS). Two different sets of samples were used which differ in the Ir-doping process. Stable Ir isotopes were introduced in the melt during the floating-zone growth process. Other samples were implanted with radioactive mercury isotopes, which decay via gold and platinum to iridium or osmium. In these samples an identification of Ir-related levels from the known half-life of the isotopes is possible. Two dominant levels at E/sub c/-0.28 eV and E /sub c/-0.57 eV are assigned to isolated substitutional Ir. Two other levels at E/sub c/-0.17 eV and E/sub c/-0.45 eV are identified as iridium-hydrogen complexes containing one or two hydrogen atoms, respectively. (16 refs).