Radiation hardness and lifetime studies of photodiodes for the optical readout of the ATLAS semiconductor tracker

A large sample (96) of epitaxial Si PIN photodiodes has been irradiated by ~1 MeV neutrons and 24 GeV protons with fluences up to 10E15 equivalent 1 MeV neutrons per square cm in order to test their suitability for use in the optical readout of the ATLAS semiconductor tracker and pixel detector at t...

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Detalles Bibliográficos
Autores principales: Charlton, D G, Dowell, John D, Homer, R J, Jovanovic, P, Kenyon, I R, Mahout, G, Shaylor, H R, Sibley, A, Wilson, J A, Bibby, J H, Gregor, I M, Wastie, R L, Weidberg, A R
Lenguaje:eng
Publicado: 1999
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(00)00666-5
http://cds.cern.ch/record/506634

Internet

https://dx.doi.org/10.1016/S0168-9002(00)00666-5
http://cds.cern.ch/record/506634

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