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Study of the characteristics of silicon MESA radiation detectors
The MESA process for building silicon diodes is described. I-V and C- V features of MESA detectors are given. Results of pulse-height spectra measurements with alpha particles incident on the front and back sides of a MESA diode establish the energy resolution of these detectors, show the evolution...
Autores principales: | , , , , , , , , , |
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Lenguaje: | eng |
Publicado: |
2001
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(00)01109-8 http://cds.cern.ch/record/512193 |