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Integrated charge preamplifier for silicon detectors with very low capacitance
Low capacitance detectors, as microstrip, pixel e silicon drift (SDDs), require strongly front-end realised as integrated circuits. The main features of these preamplifier are: low noise, low power, high gain, good stability and low cost. In this paper we describe the design of charge preamplifiers...
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| Lenguaje: | eng |
| Publicado: |
2000
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| Acceso en línea: | https://dx.doi.org/10.1063/1.1303348 http://cds.cern.ch/record/516202 |