Integrated charge preamplifier for silicon detectors with very low capacitance

Low capacitance detectors, as microstrip, pixel e silicon drift (SDDs), require strongly front-end realised as integrated circuits. The main features of these preamplifier are: low noise, low power, high gain, good stability and low cost. In this paper we describe the design of charge preamplifiers in CMOS and BiCMOS technology both for GaAs pixel detector, used as a high-efficiency X-ray imaging detector, and for SDDs, used in ALICE experiment. (3 refs).