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Integrated charge preamplifier for silicon detectors with very low capacitance
Low capacitance detectors, as microstrip, pixel e silicon drift (SDDs), require strongly front-end realised as integrated circuits. The main features of these preamplifier are: low noise, low power, high gain, good stability and low cost. In this paper we describe the design of charge preamplifiers...
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Lenguaje: | eng |
Publicado: |
2000
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Acceso en línea: | https://dx.doi.org/10.1063/1.1303348 http://cds.cern.ch/record/516202 |
_version_ | 1780897629857644544 |
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author | Nigro, L L |
author_facet | Nigro, L L |
author_sort | Nigro, L L |
collection | CERN |
description | Low capacitance detectors, as microstrip, pixel e silicon drift (SDDs), require strongly front-end realised as integrated circuits. The main features of these preamplifier are: low noise, low power, high gain, good stability and low cost. In this paper we describe the design of charge preamplifiers in CMOS and BiCMOS technology both for GaAs pixel detector, used as a high-efficiency X-ray imaging detector, and for SDDs, used in ALICE experiment. (3 refs). |
id | cern-516202 |
institution | Organización Europea para la Investigación Nuclear |
language | eng |
publishDate | 2000 |
record_format | invenio |
spelling | cern-5162022020-08-28T08:04:45Zdoi:10.1063/1.1303348http://cds.cern.ch/record/516202engNigro, L LIntegrated charge preamplifier for silicon detectors with very low capacitanceDetectors and Experimental TechniquesLow capacitance detectors, as microstrip, pixel e silicon drift (SDDs), require strongly front-end realised as integrated circuits. The main features of these preamplifier are: low noise, low power, high gain, good stability and low cost. In this paper we describe the design of charge preamplifiers in CMOS and BiCMOS technology both for GaAs pixel detector, used as a high-efficiency X-ray imaging detector, and for SDDs, used in ALICE experiment. (3 refs).oai:cds.cern.ch:5162022000 |
spellingShingle | Detectors and Experimental Techniques Nigro, L L Integrated charge preamplifier for silicon detectors with very low capacitance |
title | Integrated charge preamplifier for silicon detectors with very low capacitance |
title_full | Integrated charge preamplifier for silicon detectors with very low capacitance |
title_fullStr | Integrated charge preamplifier for silicon detectors with very low capacitance |
title_full_unstemmed | Integrated charge preamplifier for silicon detectors with very low capacitance |
title_short | Integrated charge preamplifier for silicon detectors with very low capacitance |
title_sort | integrated charge preamplifier for silicon detectors with very low capacitance |
topic | Detectors and Experimental Techniques |
url | https://dx.doi.org/10.1063/1.1303348 http://cds.cern.ch/record/516202 |
work_keys_str_mv | AT nigroll integratedchargepreamplifierforsilicondetectorswithverylowcapacitance |