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Bias dependence and bistability of radiation defects in silicon
Influence of bias on effective dopant concentration in neutron and pion irradiated$p^+ - n - n^+$ diodes has been measured. Detailed studies of annealing of the bias-induced damagehave revealed three components, with introduction rates from 0.005 to 0.008 cm$^{-1}$ andannealing time constants rangin...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(01)00584-8 http://cds.cern.ch/record/516836 |