Cargando…
Emission Channeling Studies on the Behaviour of Light Alkali Atoms in Wide-Band-Gap Semiconductors
% IS342 \\ \\ A major problem in the development of electronic devices based on diamond and wide-band-gap II-VI compound semiconductors, like ZnSe, is the extreme difficulty of either n- or p-type doping. The only reports of successful n-type doping of diamond involves ion implanted Li, which was fo...
| Autores principales: | , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2002
|
| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/5304 |