Emission Channeling Investigation of Implantation Defects and Impurities in II-VI-Semiconductors

Detailed knowledge on the behaviour of implantation damage and its influence on the lattice position and environment of implanted dopants in II-VI-compound semiconductors is necessary for a clear interpretation of results from other investigation methods and finally for technical utilization. Besides, a precise localization of impurities could help to clarify the discussion about the instability of the electrical properties of some dopants, called " aging ".\\ \\We intend to use the emission channeling method to investigate: \\ \\i) The behaviour of implantation damage which shall be probed by the lattice location of isoelectronic isotopes (Zn,Cd,Hg,Se,Te) directly after implantation at different temperatures, doses and vacancy densities and after annealing treatments, and ii) the precise lattice sites of the acceptor Ag and donor In under different conditions by implanting precursors Cd and In isotopes. \\ \\Further on we would like to test the application of a two-dimensional position and energy sensitive electron detector for emission channeling measurements which offers a significant improvement of the method like much shorter measurement times, better angular resolution, and independence on instabilities in ion beam current.