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Emission Channeling Investigation of Implantation Defects and Impurities in II-VI-Semiconductors

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Detailed knowledge on the behaviour of implantation damage and its influence on the lattice position and environment of implanted dopants in II-VI-compound semiconductors is necessary for a clear interpretation of results from other investigation methods and finally for technical utilization. Beside...

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Detalles Bibliográficos
Autores principales:	Reinhold, B, Trojahn, I, Malamud, G, Straver, J, Ronnqvist, C, Jahn, S-G, Restle, M
Lenguaje:	eng
Publicado:	2002
Materias:	Nuclear Physics - Experiment
Acceso en línea:	http://cds.cern.ch/record/5322

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