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A new approach to the optimal design of multiple field-limiting ring structures
In this paper, a computer-based analysis is performed to study layout solutions aimed at increasing the breakdown voltage in Si-microstrip detectors. For optimum performance it is crucial to achieve maximum breakdown voltage for Si detectors operating at very high bias due to the extremely hostile r...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2001
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1088/0268-1242/16/10/307 http://cds.cern.ch/record/536792 |