Cargando…
Performance of 3-D architecture silicon sensors after intense proton irradiation
Silicon detectors with a three-dimensional architecture, in which the n- and p-electrodes penetrate through the entire substrate, have been successfully fabricated. The electrodes can be separated from each other by distances that are less than the substrate thickness, allowing short collection path...
| Autores principales: | , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2001
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1109/23.960351 http://cds.cern.ch/record/559270 |