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Simulation of non-ionising energy loss and defect formation in silicon
Simulation studies of Non-Ionising Energy Loss (NIEL) in silicon exposed to various types of hadron irradiation are presented. A simulation model of migration and clustering of the produced primary defects is developed. Although there are many uncertainties in the input parameters it is shown that t...
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| Lenguaje: | eng |
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2002
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| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(02)01227-5 http://cds.cern.ch/record/597173 |