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Transmission electron microscopy of semiconductor nanostructures: an analysis of composition and strain state

Detalles Bibliográficos
Autor principal: Rosenauer, Andreas
Lenguaje:eng
Publicado: Springer 2003
Materias:
Acceso en línea:https://dx.doi.org/10.1007/3-540-36407-2
http://cds.cern.ch/record/608417
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author Rosenauer, Andreas
author_facet Rosenauer, Andreas
author_sort Rosenauer, Andreas
collection CERN
id cern-608417
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
publisher Springer
record_format invenio
spelling cern-6084172021-04-22T02:40:09Zdoi:10.1007/3-540-36407-2http://cds.cern.ch/record/608417engRosenauer, AndreasTransmission electron microscopy of semiconductor nanostructures: an analysis of composition and strain stateMathematical Physics and MathematicsSpringeroai:cds.cern.ch:6084172003
spellingShingle Mathematical Physics and Mathematics
Rosenauer, Andreas
Transmission electron microscopy of semiconductor nanostructures: an analysis of composition and strain state
title Transmission electron microscopy of semiconductor nanostructures: an analysis of composition and strain state
title_full Transmission electron microscopy of semiconductor nanostructures: an analysis of composition and strain state
title_fullStr Transmission electron microscopy of semiconductor nanostructures: an analysis of composition and strain state
title_full_unstemmed Transmission electron microscopy of semiconductor nanostructures: an analysis of composition and strain state
title_short Transmission electron microscopy of semiconductor nanostructures: an analysis of composition and strain state
title_sort transmission electron microscopy of semiconductor nanostructures: an analysis of composition and strain state
topic Mathematical Physics and Mathematics
url https://dx.doi.org/10.1007/3-540-36407-2
http://cds.cern.ch/record/608417
work_keys_str_mv AT rosenauerandreas transmissionelectronmicroscopyofsemiconductornanostructuresananalysisofcompositionandstrainstate