Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors

This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full de...

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Detalles Bibliográficos
Autores principales: Martínez, C, Rafí, J M, Lozano, M, Campabadal, F, Santander, J, Fonseca, L, Ullán, M, Moreno, A J D
Lenguaje:eng
Publicado: 2002
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1109/TNS.2002.1039670
http://cds.cern.ch/record/609043

Internet

https://dx.doi.org/10.1109/TNS.2002.1039670
http://cds.cern.ch/record/609043

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