Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors

This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full de...

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Detalles Bibliográficos
Autores principales: Martínez, C, Rafí, J M, Lozano, M, Campabadal, F, Santander, J, Fonseca, L, Ullán, M, Moreno, A J D
Lenguaje:eng
Publicado: 2002
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1109/TNS.2002.1039670
http://cds.cern.ch/record/609043
Descripción
Sumario:This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full depletion voltage and leakage current with fluence as well as their annealing behavior with time were studied. The results obtained extend the previous understanding of the role played by technology and oxygenated material in hardening silicon radiation detectors. (15 refs).

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