Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors

This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full de...

Descripción completa

Detalles Bibliográficos
Autores principales: Martínez, C, Rafí, J M, Lozano, M, Campabadal, F, Santander, J, Fonseca, L, Ullán, M, Moreno, A J D
Lenguaje:eng
Publicado: 2002
Materias:
Accelerators and Storage Rings
Acceso en línea:https://dx.doi.org/10.1109/TNS.2002.1039670
http://cds.cern.ch/record/609043
_version_ 1780900156537831424
author Martínez, C
Rafí, J M
Lozano, M
Campabadal, F
Santander, J
Fonseca, L
Ullán, M
Moreno, A J D
author_facet Martínez, C
Rafí, J M
Lozano, M
Campabadal, F
Santander, J
Fonseca, L
Ullán, M
Moreno, A J D
author_sort Martínez, C
collection CERN
description This work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full depletion voltage and leakage current with fluence as well as their annealing behavior with time were studied. The results obtained extend the previous understanding of the role played by technology and oxygenated material in hardening silicon radiation detectors. (15 refs).
id cern-609043
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-6090432019-09-30T06:29:59Zdoi:10.1109/TNS.2002.1039670http://cds.cern.ch/record/609043engMartínez, CRafí, J MLozano, MCampabadal, FSantander, JFonseca, LUllán, MMoreno, A J DNovel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectorsAccelerators and Storage RingsThis work presents the latest results on electrical properties degradation of silicon radiation detectors manufactured at the Institut de Microelectronica de Barcelona (IMB-CNM) subjected to proton irradiation at CERN, Switzerland, for high-energy physics (HEP) applications. The evolution of full depletion voltage and leakage current with fluence as well as their annealing behavior with time were studied. The results obtained extend the previous understanding of the role played by technology and oxygenated material in hardening silicon radiation detectors. (15 refs).oai:cds.cern.ch:6090432002
spellingShingle Accelerators and Storage Rings
Martínez, C
Rafí, J M
Lozano, M
Campabadal, F
Santander, J
Fonseca, L
Ullán, M
Moreno, A J D
Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors
title Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors
title_full Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors
title_fullStr Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors
title_full_unstemmed Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors
title_short Novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors
title_sort novel results on fluence dependence and annealing behavior of oxygenated and non-oxygenated silicon detectors
topic Accelerators and Storage Rings
url https://dx.doi.org/10.1109/TNS.2002.1039670
http://cds.cern.ch/record/609043
work_keys_str_mv AT martinezc novelresultsonfluencedependenceandannealingbehaviorofoxygenatedandnonoxygenatedsilicondetectors
AT rafijm novelresultsonfluencedependenceandannealingbehaviorofoxygenatedandnonoxygenatedsilicondetectors
AT lozanom novelresultsonfluencedependenceandannealingbehaviorofoxygenatedandnonoxygenatedsilicondetectors
AT campabadalf novelresultsonfluencedependenceandannealingbehaviorofoxygenatedandnonoxygenatedsilicondetectors
AT santanderj novelresultsonfluencedependenceandannealingbehaviorofoxygenatedandnonoxygenatedsilicondetectors
AT fonsecal novelresultsonfluencedependenceandannealingbehaviorofoxygenatedandnonoxygenatedsilicondetectors
AT ullanm novelresultsonfluencedependenceandannealingbehaviorofoxygenatedandnonoxygenatedsilicondetectors
AT morenoajd novelresultsonfluencedependenceandannealingbehaviorofoxygenatedandnonoxygenatedsilicondetectors

Ejemplares similares