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A large dynamic range radiation tolerant analog memory in a quarter micron CMOS technology
A 8*128 cell analog memory prototype has been designed in a commercial 0.25 jam CMOS process. The aim of this work was to investigate the possibility of designing large dynamic range mixed- mode switched capacitor circuits for High-Energy Physics (HEP) applications in deep submicron CMOS technologie...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/619235 |