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Lattice sites and stability of implanted Er in FZ and CZ Si
We report on the lattice location of $^{167}$Er in Si measured by conversion electron emission channeling. In both FZ and CZ Si, a high fraction of Er (>65%) occupies near-tetrahedral interstitial (T) sites directly following 60 keV room temperature implantation at doses of 6 $\times 10^{12}$ cm$...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/638158 |