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Lattice sites and damage annealing of implanted Tm and Er in Si
We have studied the lattice sites of Er in CZ Si single crystals by using conversion electron emission channeling from the isotope $^{167m}$Er (2.28 s) which is the decay product of radioactive $^{167}$Tm (9.25 d). Following 60 keV implantation of $^{167}$Tm at a dose of 4 $\times 10^{13}$ cm$^{-2}$...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1557/PROC-469-407 http://cds.cern.ch/record/638159 |