Lattice sites and damage annealing of implanted Tm and Er in Si

We have studied the lattice sites of Er in CZ Si single crystals by using conversion electron emission channeling from the isotope $^{167m}$Er (2.28 s) which is the decay product of radioactive $^{167}$Tm (9.25 d). Following 60 keV implantation of $^{167}$Tm at a dose of 4 $\times 10^{13}$ cm$^{-2}$...

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Autores principales: Wahl, U, Correia, J G, De Wachter, J H, Langouche, G, Marques, J G, Moons, R, Vantomme, A
Lenguaje:eng
Publicado: 2003
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1557/PROC-469-407
http://cds.cern.ch/record/638159
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author Wahl, U
Correia, J G
De Wachter, J H
Langouche, G
Marques, J G
Moons, R
Vantomme, A
author_facet Wahl, U
Correia, J G
De Wachter, J H
Langouche, G
Marques, J G
Moons, R
Vantomme, A
author_sort Wahl, U
collection CERN
description We have studied the lattice sites of Er in CZ Si single crystals by using conversion electron emission channeling from the isotope $^{167m}$Er (2.28 s) which is the decay product of radioactive $^{167}$Tm (9.25 d). Following 60 keV implantation of $^{167}$Tm at a dose of 4 $\times 10^{13}$ cm$^{-2}$ and annealing at 600°C, more than 90% of $^{167m}$Er is found close to tetrahedral insterstitial (T) sites. The tetrahedral fraction of $^{167m}$Er decreases considerably after 10 min annealing at 800°C and above. We attribute this to the onset of diffusion of the parent $^{167}$Tm and its trapping at other defects, presumably oxygen atoms or clusters of Tm/Er.
id cern-638159
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
record_format invenio
spelling cern-6381592019-09-30T06:29:59Zdoi:10.1557/PROC-469-407http://cds.cern.ch/record/638159engWahl, UCorreia, J GDe Wachter, J HLangouche, GMarques, J GMoons, RVantomme, ALattice sites and damage annealing of implanted Tm and Er in SiCondensed MatterWe have studied the lattice sites of Er in CZ Si single crystals by using conversion electron emission channeling from the isotope $^{167m}$Er (2.28 s) which is the decay product of radioactive $^{167}$Tm (9.25 d). Following 60 keV implantation of $^{167}$Tm at a dose of 4 $\times 10^{13}$ cm$^{-2}$ and annealing at 600°C, more than 90% of $^{167m}$Er is found close to tetrahedral insterstitial (T) sites. The tetrahedral fraction of $^{167m}$Er decreases considerably after 10 min annealing at 800°C and above. We attribute this to the onset of diffusion of the parent $^{167}$Tm and its trapping at other defects, presumably oxygen atoms or clusters of Tm/Er.CERN-OPEN-2003-023oai:cds.cern.ch:6381592003-08-18
spellingShingle Condensed Matter
Wahl, U
Correia, J G
De Wachter, J H
Langouche, G
Marques, J G
Moons, R
Vantomme, A
Lattice sites and damage annealing of implanted Tm and Er in Si
title Lattice sites and damage annealing of implanted Tm and Er in Si
title_full Lattice sites and damage annealing of implanted Tm and Er in Si
title_fullStr Lattice sites and damage annealing of implanted Tm and Er in Si
title_full_unstemmed Lattice sites and damage annealing of implanted Tm and Er in Si
title_short Lattice sites and damage annealing of implanted Tm and Er in Si
title_sort lattice sites and damage annealing of implanted tm and er in si
topic Condensed Matter
url https://dx.doi.org/10.1557/PROC-469-407
http://cds.cern.ch/record/638159
work_keys_str_mv AT wahlu latticesitesanddamageannealingofimplantedtmanderinsi
AT correiajg latticesitesanddamageannealingofimplantedtmanderinsi
AT dewachterjh latticesitesanddamageannealingofimplantedtmanderinsi
AT langoucheg latticesitesanddamageannealingofimplantedtmanderinsi
AT marquesjg latticesitesanddamageannealingofimplantedtmanderinsi
AT moonsr latticesitesanddamageannealingofimplantedtmanderinsi
AT vantommea latticesitesanddamageannealingofimplantedtmanderinsi

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