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Lattice location and stability of ion implanted Cu in Si
We report on the lattice location of ion implanted Cu in Si using the emission channeling technique. The angular distribution of $\beta^{-}$-particles emitted by the radioactive isotope $^{67}$Cu was monitored following room temperature implantation into Si single crystals and annealing up to 600°C....
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1103/PhysRevLett.84.1495 http://cds.cern.ch/record/638163 |