Advances in electron emission channeling measurements in semiconductors

This paper reports on recent advances in the application of electron emission channeling to studies of the lattice location of radioactive probe atoms in semiconductors. The introduction of position-sensitive electron detection has resulted in an improvement in the experimental efficiency of this method by two orders of magnitude. Electron emission channeling now allows to carry out detailed lattice location studies, and is especially interesting for cases where conventional ion beam lattice location techniques cannot be applied due to a lack of sensitivity. Characteristic features of electron emission channeling with position-sensitive detection are discussed and illustrated by results on the lattice location of Er in Si and GaAs, and on the lattice sites and stability of implanted transition metals in Si.