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Direct evidence for implanted Fe on substitutional Ga sites in GaN
The lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope $^{59}$Mn at a dose of 1.0 $\times 10^{13}$ cm$^{-2}$ and annealing up to 900°C, the angular...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1063/1.1372201 http://cds.cern.ch/record/638168 |