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Direct evidence for implanted Fe on substitutional Ga sites in GaN
The lattice location of iron in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. Following 60-keV room-temperature implantation of the precursor isotope $^{59}$Mn at a dose of 1.0 $\times 10^{13}$ cm$^{-2}$ and annealing up to 900°C, the angular...
Autores principales: | Wahl, U, Vantomme, A, Langouche, G, Correia, J G, Peralta, L |
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Lenguaje: | eng |
Publicado: |
2003
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1063/1.1372201 http://cds.cern.ch/record/638168 |
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