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Emission channeling studies of implanted $^{167m}$Er in InP
We have used conversion electron emission channeling to determine the lattice location of $^{167m}$Er ($t_{1/2}$=2.28 s) in InP after 60 keV room temperature implantation of $^{167}$Tm ($t_{1/2}$=9.25 d) at a dose of 6.8 $\times 10^{12}$ cm$^{-2}$. Following annealing at temperatures above the major...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-583X(00)00531-0 http://cds.cern.ch/record/638169 |