Emission channeling studies of implanted $^{167m}$Er in InP

We have used conversion electron emission channeling to determine the lattice location of $^{167m}$Er ($t_{1/2}$=2.28 s) in InP after 60 keV room temperature implantation of $^{167}$Tm ($t_{1/2}$=9.25 d) at a dose of 6.8 $\times 10^{12}$ cm$^{-2}$. Following annealing at temperatures above the major...

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Detalles Bibliográficos
Autores principales: Wahl, U, Vantomme, A, Langouche, G, Araújo, J P
Lenguaje:eng
Publicado: 2003
Materias:
Condensed Matter
Acceso en línea:https://dx.doi.org/10.1016/S0168-583X(00)00531-0
http://cds.cern.ch/record/638169
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author Wahl, U
Vantomme, A
Langouche, G
Araújo, J P
author_facet Wahl, U
Vantomme, A
Langouche, G
Araújo, J P
author_sort Wahl, U
collection CERN
description We have used conversion electron emission channeling to determine the lattice location of $^{167m}$Er ($t_{1/2}$=2.28 s) in InP after 60 keV room temperature implantation of $^{167}$Tm ($t_{1/2}$=9.25 d) at a dose of 6.8 $\times 10^{12}$ cm$^{-2}$. Following annealing at temperatures above the major recovery step of the implantation damage at 100-150°C, we observe around 75% of Er on substitutional In sites. A smaller fraction of Er (7%) is found on substitutional P sites, the remainder on random sites. Annealing the unprotected InP crystal at temperatures above 250°C in vacuum causes a decrease in the channeling effects.
id cern-638169
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
record_format invenio
spelling cern-6381692019-09-30T06:29:59Zdoi:10.1016/S0168-583X(00)00531-0http://cds.cern.ch/record/638169engWahl, UVantomme, ALangouche, GAraújo, J PEmission channeling studies of implanted $^{167m}$Er in InPCondensed MatterWe have used conversion electron emission channeling to determine the lattice location of $^{167m}$Er ($t_{1/2}$=2.28 s) in InP after 60 keV room temperature implantation of $^{167}$Tm ($t_{1/2}$=9.25 d) at a dose of 6.8 $\times 10^{12}$ cm$^{-2}$. Following annealing at temperatures above the major recovery step of the implantation damage at 100-150°C, we observe around 75% of Er on substitutional In sites. A smaller fraction of Er (7%) is found on substitutional P sites, the remainder on random sites. Annealing the unprotected InP crystal at temperatures above 250°C in vacuum causes a decrease in the channeling effects.CERN-OPEN-2003-031oai:cds.cern.ch:6381692003-08-18
spellingShingle Condensed Matter
Wahl, U
Vantomme, A
Langouche, G
Araújo, J P
Emission channeling studies of implanted $^{167m}$Er in InP
title Emission channeling studies of implanted $^{167m}$Er in InP
title_full Emission channeling studies of implanted $^{167m}$Er in InP
title_fullStr Emission channeling studies of implanted $^{167m}$Er in InP
title_full_unstemmed Emission channeling studies of implanted $^{167m}$Er in InP
title_short Emission channeling studies of implanted $^{167m}$Er in InP
title_sort emission channeling studies of implanted $^{167m}$er in inp
topic Condensed Matter
url https://dx.doi.org/10.1016/S0168-583X(00)00531-0
http://cds.cern.ch/record/638169
work_keys_str_mv AT wahlu emissionchannelingstudiesofimplanted167merininp
AT vantommea emissionchannelingstudiesofimplanted167merininp
AT langoucheg emissionchannelingstudiesofimplanted167merininp
AT araujojp emissionchannelingstudiesofimplanted167merininp

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