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Annealing behavior and lattice site location of Er implanted InGaN
Single crystalline InGaN epilayers with different In content were implanted with Er$^{+}$ fluences in the range of 1 $\times 10^{13}$ to 5 $\times 10^{15}$ cm$^{-2}$ at room temperature. The structural changes and lattice site location were studied with emission channeling and RBS/channeling. Photol...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-583X(03)00930-3 http://cds.cern.ch/record/638267 |