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Emission channeling experiments from the decay of $^{149}$Gd to $^{149}$Eu in GaN
The lattice site location of excited states of $^{149}$Eu was studied by means of the emission channeling technique. 60 keV implantation of $^{149}$Tb into a GaN thin film was performed at room temperature up to a dose of 2.0 $\times 10^{13}$ cm$^{-2}$. This radioactive isotope eventually decays int...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/j.mseb.2003.08.025 http://cds.cern.ch/record/638269 |