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Lattice sites and damage annealing of Er in low-dose implanted GaAs
We have used conversion electron emission channeling to determine the lattice location of $^{167m}$Er ($t_{1/2}$=2.28 s) in GaAs after 60 keV room temperature implantation of $^{167}$Tm ($t_{1/2}$=9.25 d) at low doses (0.6-3 $\times 10^{13}$ cm$^{-2}$). Following a recovery step of the implantation...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-583X(98)00673-9 http://cds.cern.ch/record/638435 |