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Lattice location of implanted Cu in Si
We have implanted the radioactive probe atom $^{67}$Cu ($t_{1/2}$=61.9 h) into single-crystalline Si. Monitoring the $\beta^{-}$-emission yield from the decay of $^{67}$Cu to $^{67}$Zn as a function of angle from different crystallographic directions allows to determine the lattice location of the C...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0921-4526(99)00479-2 http://cds.cern.ch/record/638439 |